Depletion type floating gate p-channel MOS transistor for recording action potentials generated by cultured neurons

Biosensors and Bioelectronics

Volumn 19, Issue 12, 2004, Pages 1703-1709

  Cohen, Ariel ^a   Spira, Micha E ^a   Yitshaik, Shlomo ^a   Borghs, Gustaaf ^b   Shwartzglass, Ofer ^a   Shappir, Joseph ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b IMEC   (Belgium)

Author keywords

Aplysia; Depletion type device; Field effect transistor; Floating gate; Neuron transistor coupling

Indexed keywords

CELLS; CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; NEUROLOGY; POLYSILICON;

NEURON SIGNALS; NEURONS; THERMAL OXIDES; TRANSDUCTANCE;

BIOSENSORS;

SILICONE DERIVATIVE;

ACTION POTENTIAL; ANIMAL CELL; ARTICLE; CHANNEL GATING; CONTROLLED STUDY; MEMBRANE POTENTIAL; MOLLUSC; NERVE CONDUCTION; NERVE STIMULATION; NEUROPHYSIOLOGY; NONHUMAN; SEMICONDUCTOR;

ACTION POTENTIALS; AMPLIFIERS; ANIMALS; APLYSIA; CELLS, CULTURED; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MICROELECTRODES; NEURONS; SURFACE PROPERTIES; TRANSDUCERS; TRANSISTORS;

APLYSIA;

EID: 2442597821     PISSN: 09565663     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.bios.2004.01.021     Document Type: Article

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