Flexible pentacene ion sensitive field effect transistor with a hydrogenated silicon nitride surface treated Parylene top gate insulator

Applied Physics Letters

Volumn 93, Issue 18, 2008, Pages

  Diallo, K ^a   Lemiti, M ^a   Tardy, J ^a   Bessueille, F ^b   Jaffrezic Renault, N ^b  

^a ECOLE CENTRALE DE LYON   (France)

^b UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABS RESINS; ELECTRON MULTIPLIERS; GATE DIELECTRICS; GATES (TRANSISTOR); HYDROGENATION; HYDROGENOLYSIS; ION SENSITIVE FIELD EFFECT TRANSISTORS; IONS; NITRIDES; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON; SILICON NITRIDE; TRANSISTORS;

ALKALINE PH; HYDROGENATED SILICONS; MODERATE TEMPERATURES; NITRIDE SURFACES; ORGANIC FIELD EFFECT TRANSISTORS; PARYLENE; PENTACENE; PH RESPONSES; SENSITIVE SENSORS; THIN LAYERS; TOP GATES;

FIELD EFFECT TRANSISTORS;

EID: 55849110453     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3013578     Document Type: Article

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