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Volumn 63, Issue 1, 2011, Pages 105-109

Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells

Author keywords

Crystal quality; InGaN; Photo response; Schottky barrier; Solar cell

Indexed keywords

AFM IMAGE; CRYSTAL QUALITIES; CURRENT CHARACTERISTIC; CURRENT SPREADING; FILL FACTOR; INGAN; KEY FACTORS; MAXIMUM OUTPUT POWER; PHOTORESPONSES; PHOTOVOLTAIC PERFORMANCE; PREPARATION AND PROPERTIES; SCHOTTKY; SCHOTTKY BARRIERS; SEMITRANSPARENT CONTACTS; SIMULATED RESULTS; X RAY ROCKING CURVE;

EID: 80051800083     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.05.001     Document Type: Article
Times cited : (14)

References (28)
  • 18
    • 80051802316 scopus 로고    scopus 로고
    • Fonash S et al. < http://www.ampsmodeling.org/default.htm >.
    • Fonash, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.