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Applied Surface Science

Volumn 257, Issue 23, 2011, Pages 10031-10035

ALD of ZnO using diethylzinc as metal-precursor and oxygen as oxidizing agent

(2) Janocha, E a Pettenkofer, C a

a HAHN MEITNER INSTITUT (Germany)

Author keywords

Atomic layer deposition; Diethylzinc; Oxygen; Photoelectron spectroscopy; Zinc oxide

Indexed keywords

ATOMIC LAYER DEPOSITION; FILM GROWTH; II-VI SEMICONDUCTORS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; SYNCHROTRON RADIATION; ZINC OXIDE;

DIETHYLZINC; FILM PROPERTIES; METAL PRECURSOR; OXIDIZING AGENTS; OXYGEN PRECURSORS; SITU X-RAY PHOTOELECTRON SPECTROSCOPY; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY; TEMPERATURE REGIONS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 80051786352 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.06.133 Document Type: Article

Times cited : (43)

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