Annealing effect on low frequency noise in MgO-based magnetic tunnel junctions

Journal of Physics: Conference Series

Volumn 303, Issue 1, 2011, Pages

  Feng, J F ^a   Diao, Z ^a   Coey, J M D ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT COMPOUNDS; ELECTRODES; MAGNETISM; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE; TUNNEL JUNCTIONS;

ANNEALING EFFECTS; ANNEALING TEMPERATURES; ANTIPARALLEL STATE; FERROMAGNETIC ELECTRODES; INELASTIC TUNNELING; LOW-FREQUENCY NOISE; MAGNETIC TUNNEL JUNCTION; MAGNETIZATION FLUCTUATIONS;

MAGNETIC DEVICES;

EID: 80051689630     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/303/1/012098     Document Type: Conference Paper

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