High inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions

Applied Physics Letters

Volumn 91, Issue 10, 2007, Pages

  Feng, J F ^a,b   Feng, Gen ^a   Coey, J M D ^a   Han, X F ^b   Zhan, W S ^b  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; ELECTRON TUNNELING; MAGNETIZATION; SATURATION (MATERIALS COMPOSITION); THICKNESS CONTROL; THIN FILMS; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTIONS; MAGNETORESISTANCE SIGN CHANGE; PINNED LAYER; ROOM TEMPERATURE;

MAGNETORESISTANCE;

EID: 34548513008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2779241     Document Type: Article

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