1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1066-1069

  El Kazzi, M ^a   Webb, D J ^a   Czornomaz, L ^a   Rossel, C ^a   Gerl, C ^a   Richter, M ^a   Sousa, M ^a   Caimi, D ^a   Siegwart, H ^a   Fompeyrine, J ^a   Marchiori, C ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

Amorphous Si; CET; GaAs passivation; HfO2; MBE; MOSCAP; XPS

Indexed keywords

AMORPHOUS SI; CET; GAAS PASSIVATION; HFO2; MOSCAP;

CAPACITANCE; GALLIUM ALLOYS; GALLIUM ARSENIDE; HAFNIUM OXIDES; HEAT TREATMENT; LOGIC GATES; MOS CAPACITORS; PASSIVATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SILICON; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 79958040707     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.151     Document Type: Conference Paper

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