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Applied Physics Letters

Volumn 99, Issue 5, 2011, Pages

Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor

(6) Panciera, F a,b Hoummada, K b Gregoire, M a Juhel, M a Bicais, N a Mangelinck, D b

a STMICROELECTRONICS (France)

b AIX MARSEILLE UNIVERSITÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC ATOM; ATOM PROBE TOMOGRAPHY; BLANKET WAFERS; MICRO-ELECTRONIC DEVICES; POLYCRYSTALLINE-SI; RAPID HEAT TREATMENT; SELECTIVE ETCHING; SILICIDATION; SILICIDE FORMATION;

ARSENIC; FIELD EFFECT TRANSISTORS; MICROELECTRONICS; POLYSILICON; SILICIDES; SILICON WAFERS;

PLATINUM;

EID: 80051595014 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3616150 Document Type: Article

Times cited : (33)

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