Electron spin resonance study of interface trap states and charge carrier concentration in rubrene single-crystal field-effect transistors

Applied Physics Express

Volumn 4, Issue 8, 2011, Pages

  Tsuji, Masaki ^a   Arai, Norimichi ^a   Marumoto, Kazuhiro ^a,b   Takeya, Jun ^b,c   Shimoi, Yukihiro ^d   Tanaka, Hisaaki ^e   Kuroda, Shin Ichi ^e   Takenobu, Taishi ^b,f   Iwasa, Yoshihiro ^g  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^e NAGOYA UNIVERSITY   (Japan)

^f WASEDA UNIVERSITY   (Japan)

^g UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM-CONTACT; CHANNEL APPROXIMATION; DEEP TRAPS; DIELECTRIC SURFACE; DRAIN VOLTAGE; ESR SPECTRA; GATE VOLTAGES; INTERFACE TRAP STATE; PARYLENE C; RUBRENES; SHARP CONTRAST;

CARRIER CONCENTRATION; GATE DIELECTRICS; GATES (TRANSISTOR); LAMINATING; MESFET DEVICES; SILICON COMPOUNDS; SINGLE CRYSTALS; SINGLE ELECTRON TRANSISTORS; TRANSISTORS;

ELECTRON SPIN RESONANCE SPECTROSCOPY;

EID: 80051577710     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.085702     Document Type: Article

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