메뉴 건너뛰기




Volumn 84, Issue 4, 2011, Pages

Charge separation and temperature-induced carrier migration in Ga 1-xInxNyAs1-y multiple quantum wells

Author keywords

[No Author keywords available]

Indexed keywords


EID: 79961188662     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.045302     Document Type: Article
Times cited : (40)

References (32)
  • 1
    • 0036685526 scopus 로고    scopus 로고
    • SSTEET 0268-1242 10.1088/0268-1242/17/8/317
    • J. S. Harris Jr., Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/17/8/317 17, 880 (2002).
    • (2002) Semicond. Sci. Technol. , vol.17 , pp. 880
    • Harris, Jr.J.S.1
  • 9
    • 18644379568 scopus 로고    scopus 로고
    • Enhanced optical and structural properties of 1.3 μm GaInNAsGaAs multiple quantum-well heterostructures with stepped strain-mediating layers
    • DOI 10.1063/1.1862784, 062107
    • H. Y. Liu, W. M. Soong, P. Navaretti, M. Hopkinson, and J. P. R. David, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1862784 86, 062107 (2005). (Pubitemid 40661621)
    • (2005) Applied Physics Letters , vol.86 , Issue.6 , pp. 1-3
    • Liu, H.Y.1    Soong, W.M.2    Navaretti, P.3    Hopkinson, M.4    David, J.P.R.5
  • 22
    • 33846106395 scopus 로고    scopus 로고
    • Two-exciton state in GaSb/GaAs type II quantum dots studied using near-field photoluminescence spectroscopy
    • DOI 10.1063/1.2425039
    • K. Matsuda, S. V. Nair, H. E. Ruda, Y. Sugimoto, T. Saiki, and K. Yamaguchi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2425039 90, 013101 (2007). (Pubitemid 46068353)
    • (2007) Applied Physics Letters , vol.90 , Issue.1 , pp. 013101
    • Matsuda, K.1    Nair, S.V.2    Ruda, H.E.3    Sugimoto, Y.4    Saiki, T.5    Yamaguchi, K.6
  • 31
    • 49949133713 scopus 로고
    • 10.1016/0031-8914(67)90062-6
    • Y. P. Varshni, Physica 10.1016/0031-8914(67)90062-6 34, 149 (1967).
    • (1967) Physica , vol.34 , pp. 149
    • Varshni, Y.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.