Two-exciton state in GaSb/GaAs type II quantum dots studied using near-field photoluminescence spectroscopy

Applied Physics Letters

Volumn 90, Issue 1, 2007, Pages

  Matsuda, K ^a,b   Nair, S V ^c   Ruda, H E ^c   Sugimoto, Y ^d   Saiki, T ^d   Yamaguchi, K ^e  

^a KYOTO UNIVERSITY   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^c UNIVERSITY OF TORONTO   (Canada)

^d KEIO UNIVERSITY   (Japan)

^e UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS;

LINEWIDTH; PHOTOLUMINESCENCE SPECTROSCOPY; PSEUDOPOTENTIAL MODEL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846106395     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2425039     Document Type: Article

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