Electrostatic modification of infrared response in gated structures based on VO2

Applied Physics Letters

Volumn 92, Issue 24, 2008, Pages

  Qazilbash, M M ^a   Li, Z Q ^a   Podzorov, V ^b   Brehm, M ^c   Keilmann, F ^c   Chae, B G ^d   Kim, H T ^d   Basov, D N ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c MAX PLANCK INSTITUTE OF BIOCHEMISTRY   (Germany)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATICS; NANOSTRUCTURED MATERIALS; TRANSITION METALS; VANADIUM;

ELECTROSTATIC DOPING; ELECTROSTATIC MODIFICATION; GATED STRUCTURES; INFRARED (IR) RESPONSE; VANADIUM-DIOXIDE;

CHARGE CARRIERS;

EID: 45749118738     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2939434     Document Type: Article

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