Controllable giant dielectric constant in AlOx/TiOy nanolaminates

Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

  Li, Wei ^a   Chen, Zhijun ^a   Premnath, Ramesh N ^a,b   Kabius, Bernd ^a   Auciello, Orlando ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN AND DEVELOPMENT; DIELECTRIC CONSTANT VALUES; EMBEDDED CAPACITOR; ENERGY STORAGE CAPACITOR; GIANT DIELECTRIC CONSTANTS; HIGH DIELECTRIC CONSTANT MATERIALS; HIGH DIELECTRIC CONSTANTS; IMPLANTABLE BIOMEDICAL DEVICES; LOW DIELECTRIC CONSTANTS; NANO-LAMINATES; NANOLAMINATE; NANOLAMINATE STRUCTURES; RENEWABLE ENERGY GENERATION;

CAPACITORS; EMBEDDED SYSTEMS; ENERGY STORAGE; FLYWHEELS; PERMITTIVITY;

DIELECTRIC MATERIALS;

EID: 79961114265     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3603002     Document Type: Article

References (24)

1. R. M. Wallace and G. D. Wilk, Crit. Rev. Solid State Mater. Sci. 28, 231 (2003). 10.1080/714037708
2. R. M. Wallace and G. Wilk, MRS Bull. 27, 186 (2002). 10.1557/mrs2002.70
3. R. Wallace and O. Auciello, in Multifunctional Thin Films Book Series, edited by, O. Auciello, and, R. Ramesh, (Springer, New York, 2005), pp. 79-126.
4. O. Auciello, S. Saha, D. Kaufman, S. K. Streiffer, J. Im, and P. Bachmann, J. Electroceram. 12, 119 (2004). 10.1023/B:JECR.0000034006.59246.5e
5. M. Gutowski, J. E. Jaffe, C. L. Liu, M. Stoker, R. I. Hegde, R. S. Rai, and P. J. Tobin, Appl. Phys. Lett. 80, 1897 (2002). 10.1063/1.1458692
6. C. J. Forst, C. R. Ashman, K. Schwartz, and P. E. Blochl, Nature 427, 53 (2004). 10.1038/nature02204
7. Y. J. Cho, N. V. Nguyen, C. A. Richter, J. R. Ehrstein, B. H. Lee, and J. C. Lee, Appl. Phys. Lett. 80, 1249 (2002). 10.1063/1.1448384
8. O. Auciello, W. Fan, B. Kabius, S. Saha, J. A. Carlisle, R. P. H. Chang, C. Lopez, E. A. Irene, and R. A. Baragiola, Appl. Phys. Lett. 86, 042904 (2005). 10.1063/1.1856137
9. H. Y. Yu, M. F. Li, B. J. Cho, C. C. Yeo, M. S. Joo, D. L. Kwong, J. S. Pan, C. H. Ang, J. Z. Zheng, and S. Ramanathan, Appl. Phys. Lett. 81, 376 (2002). 10.1063/1.1492024
10. F. El Kamel, P. Gonon, and C. Vallee, Appl. Phys. Lett. 91, 172909 (2007). 10.1063/1.2803221
11. D. Fuchs, C. W. Schneider, R. Schneider, and H. Rietschel, J. Appl. Phys. 85, 7362 (1999). 10.1063/1.369363
12. W. Li, O. Auciello, R. Premnath, and B. Kabius, Appl. Phys. Lett. 96, 162907 (2010). 10.1063/1.3413961
13. L. Shi, J. Yin, K. B. Yin, F. Gao, Y. D. Xia, and Z. G. Liu, Appl. Phys. A 90, 379 (2008). 10.1007/s00339-007-4290-4
14. W. Jeon, H. S. Chung, D. Joo, and S. W. Kang, Electrochem. Solid-State Lett. 11, H19 (2008).
15. D. C. Sinclair and A. R. West, J. Appl. Phys. 66, 3850 (1989). 10.1063/1.344049
16. W. Li and R. W. Schwartz, Phys. Rev. B 75, 012104 (2007). 10.1103/PhysRevB.75.012104
17. J. F. Scott, Ferroelectric Memories (Springer, Berlin, 2000).
18. W. Li, K. Chen, Y. Y. Yao, J. S. Zhu, and Y. N. Wang, Appl. Phys. Lett. 85, 4717 (2004). 10.1063/1.1823583
19. C. C. Homes, T. Vogt, S. M. Shapiro, S. Wakimoto, and A. P. Ramirez, Science 293, 673 (2001). 10.1126/science.1061655
20. J. B. Wu, C. W. Nan, Y. Lin, and Y. Deng, Phys. Rev. Lett. 89, 217601 (2002). 10.1103/PhysRevLett.89.217601
21. S. Sarkar, P. K. Jana, B. K. Chaudhuri, and H. Sakata, Appl. Phys. Lett. 89, 212905 (2006). 10.1063/1.2393001
22. P. Thongbar, T. Yamwong, and S. Maensiri, Solid State Commun. 147, 385 (2008). 10.1016/j.ssc.2008.06.020
23. M. A. Subramanian, D. Li, N. Duan, B. A. Reisner, and A. W. Sleight, J. Solid State Chem. 151, 323 (2000). 10.1006/jssc.2000.8703
24. F. Zhao, Z. X. Yue, J. Pei, D. H. Yang, Z. L. Gui, and L. T. Li, Appl. Phys. Lett. 91, 052903 (2007). 10.1063/1.2767190