Ti O2 Al2 O3 Ti O2 nanolaminated thin films for DRAM capacitor deposited by plasma-enhanced atomic layer deposition

Electrochemical and Solid-State Letters

Volumn 11, Issue 2, 2008, Pages

  Jeon, Woojin ^a   Chung, Hoi Sung ^a   Joo, Daekwon ^a   Kang, Sang Won ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITORS; DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; LEAKAGE CURRENTS;

AL2 O3 NANOLAMINATED FILM; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION;

THIN FILMS;

EID: 37549032424     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2813881     Document Type: Article

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