Science and technology of high dielectric constant thin films and materials integration for application to high frequency devices

Journal of Electroceramics

Volumn 12, Issue 1-2, 2004, Pages 119-131

  Auciello, O ^a   Saha, S ^a   Kaufman, D Y ^a   Streiffer, S K ^a   Fan, W ^a   Kabius, B ^a   Im, J ^a,b   Baumann, P ^a,c  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b Agere Systems   (United States)

^c AIXTRON AG   (Germany)

Author keywords

High dielectric constant; High frequency devices; Thin films

Indexed keywords

ELECTRICAL BREAKDOWN FIELDS; HIGH DIELECTRIC CONSTANTS; HIGH FREQUENCY DEVICES; INTERFACIAL CONTAMINATION;

ANNEALING; BARIUM COMPOUNDS; CRYSTALLOGRAPHY; ELECTRIC FIELDS; FIELD EMISSION MICROSCOPES; MAGNETRON SPUTTERING; MICROSTRUCTURE; OSCILLATIONS; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); VAPOR DEPOSITION; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 3142728507     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:JECR.0000034006.59246.5e     Document Type: Review

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