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Volumn 110, Issue 2, 2011, Pages

The different initial oxidation kinetics of Zr(0001) and Zr(1010) surfaces

Author keywords

[No Author keywords available]

Indexed keywords

IN-SITU; INITIAL OXIDATION; ION SPUTTERING; OXIDATION RATES; OXIDATION TEMPERATURE; OXYGEN DIFFUSIVITY; PARTIAL OXYGEN PRESSURES; TEMPERATURE RANGE; THERMALLY ACTIVATED; X RAY PHOTOEMISSION SPECTROSCOPY;

EID: 79961106630     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3608044     Document Type: Article
Times cited : (25)

References (57)
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    • As postulated in Ref., the O vacancies, generated in the oxide layer upon the dissolution of O atoms/ions into the Zr substrate, sustain an outward flux of O vacancies, which diffuse through the oxide film to the surface and are annihilated there (i.e., filled-uwith oxygen ions from the oxygen atmosphere)
    • As postulated in Ref., the O vacancies, generated in the oxide layer upon the dissolution of O atoms/ions into the Zr substrate, sustain an outward flux of O vacancies, which diffuse through the oxide film to the surface and are annihilated there (i.e., filled-up with oxygen ions from the oxygen atmosphere).
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    • Note: at even higher oxidation temperatures (say, T 573 K) the oxygen dissolution rate into -Zr becomes much faster than the formation of the oxide film (e.g., as observed in Ref.). Then oxygen incorporation into the substrate is no longer rate-determining for the oxide-film growth
    • Note: at even higher oxidation temperatures (say, T 573 K) the oxygen dissolution rate into -Zr becomes much faster than the formation of the oxide film (e.g., as observed in Ref.). Then oxygen incorporation into the substrate is no longer rate-determining for the oxide-film growth.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.