Hydrosilylation of styrene on water-saturated Si(001)-2× 1 at room temperature

Journal of Physical Chemistry C

Volumn 115, Issue 30, 2011, Pages 14827-14833

  Bournel, F ^a   Gallet, J J ^a   Pierucci, D ^a   Khaliq, A ^a   Rochet, F ^a   Pietzsch, A ^b  

^a Université Pierre et Marie Curie   (France)

^b LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION BARRIERS; ADSORBED MOLECULES; AREAL DENSITIES; COMMON FEATURES; CONCERTED MECHANISM; DOPED SUBSTRATES; HYDROSILYLATION REACTION; LATTER MECHANISM; MONOHYDRIDES; ROOM TEMPERATURE; SI ATOMS; SI(0 0 1); SI-DIMER; SILICON DANGLING BOND; SPECTRAL SHAPES; SURFACE HYDROXYL; X RAY PHOTOEMISSION SPECTROSCOPY; XPS SPECTRA;

ATOMS; DANGLING BONDS; DIMERS; EMISSION SPECTROSCOPY; GRAFTING (CHEMICAL); HYDROSILYLATION; MOLECULES; OLEFINS; PASSIVATION; STYRENE; SUBSTRATES; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 79961087468     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp202913y     Document Type: Article

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