Temperature dependence of radiative and Auger losses in quantum wells

IEEE Journal of Quantum Electronics

Volumn 44, Issue 2, 2008, Pages 185-191

  Hader, Jörg ^a,b   Moloney, Jerome V ^a,b   Koch, Stephan W ^c  

^a NONLINEAR CONTROL STRATEGIES INC   (United States)

^b UNIVERSITY OF ARIZONA   (United States)

^c PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

Auger recombination; Gain; InGaAsP; Modeling; Quantum well lasers; Spontaneous emission; Threshold current

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CARRIER COMMUNICATION; COULOMB INTERACTIONS; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE DISTRIBUTION; THRESHOLD CURRENT DENSITY;

AUGER RECOMBINATION; POWER LAW; RADIATIVE LOSS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 38349143964     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2007.910938     Document Type: Article

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