Deviation from proportional relationship between emitter charging time and inverse current of heterojunction bipolar transistors operating at high current density

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 491-493

  Yamada, Masayuki ^a   Uesawa, Takafumi ^a   Miyamoto, Yasuyuki ^a   Furuya, Kazuhito ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Emitter charging time; Fermi Dirac distribution; heterojunction bipolar transistors (HBTs); high current density operation

Indexed keywords

BOLTZMANN APPROXIMATIONS; CHARGING TIME; CONSTANT CAPACITANCE; FERMI-DIRAC DISTRIBUTION; HIGH CURRENT DENSITIES; HIGH-CURRENT-DENSITY OPERATION; LINEAR CHARACTERISTICS; THEORETICAL CALCULATIONS; TOTAL DELAY TIME;

BIPOLAR TRANSISTORS; ELECTRON EMISSION; HETEROJUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 79953059543     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2107497     Document Type: Article

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