Phase transition characteristics of Bi/Sn doped Ge2Sb2Te5thin film for PRAM application

Thin Solid Films

Volumn 515, Issue 12, 2007, Pages 5049-5053

  Park, Tae Jin ^a   Choi, Se Young ^a   Kang, Myung Jin ^b  

^a Yonsei University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Chalcogenides; Crystallization; Electrical properties and measurements; Physical vapor deposition (PVD)

Indexed keywords

CHALCOGENIDES; CRYSTAL STRUCTURE; CRYSTALLIZATION; DOPING (ADDITIVES); PHASE TRANSITIONS; PHYSICAL VAPOR DEPOSITION; RANDOM ACCESS STORAGE;

CRYSTALLIZATION TEMPERATURE; OPTIMUM DOPING CONCENTRATION; PHASE TRANSITION CHARACTERISTICS; PHASE TRANSITION KINETICS;

THIN FILMS;

EID: 33947133632     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.045     Document Type: Article

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