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Volumn 918, Issue , 2006, Pages 29-34

Investigation on ultra-high density and high speed non-volatile Phase Change Random Access Memory (PCRAM) by material engineering

Author keywords

[No Author keywords available]

Indexed keywords

CYANIDES; DIFFERENTIAL SCANNING CALORIMETRY; MATERIALS SCIENCE; MELTING; NONVOLATILE STORAGE;

EID: 33751052049     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0918-h05-05-g06-05     Document Type: Conference Paper
Times cited : (6)

References (12)
  • 5
    • 33751065148 scopus 로고    scopus 로고
    • Novel cell structure of PRAM with thin metal layer inserted GeSbTe
    • Y.N.Hwang, etc "Novel Cell Structure of PRAM with Thin Metal Layer inserted GeSbTe" Samsung Electronics IEDM 2003
    • Samsung Electronics IEDM 2003
    • Hwang, Y.N.1
  • 6
    • 33751037048 scopus 로고    scopus 로고
    • Proposal for a memory transistor using phase change and nanosize effects
    • Gunma University Japan
    • Hosaka.S, Miyauchi.K, Tamura,T Proposal for a memory transistor using phase change and nanosize effects Science Direct, Gunma University Japan
    • Science Direct
    • Hosaka, S.1    Miyauchi, K.2    Tamura, T.3
  • 8
    • 0035868151 scopus 로고    scopus 로고
    • Optical properties and structure of Te-Ge-Bi-Sb compounds with fast phase change capability
    • C.M.Lee, T.S.Chin, E.Y.Huang Optical properties and structure of Te-Ge-Bi-Sb compounds with fast phase change capability Jpn. J. Appl. Phys Vol 89, No 6 (2001)
    • (2001) Jpn. J. Appl. Phys Vol 89 , Issue.6
    • Lee, C.M.1    Chin, T.S.2    Huang, E.Y.3
  • 12
    • 5444235653 scopus 로고    scopus 로고
    • Understanding the phase change mechanism of rewritable optical media
    • Oct
    • Kolobov.A, Fons.P etc Understanding the phase change mechanism of rewritable optical media Nature Oct 2004 Vol 3 Pg 703-708
    • (2004) Nature , vol.3 , pp. 703-708
    • Kolobov, A.1    Fons, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.