Crystallization behavior of non-stoichiometric Ge-Bi-Te ternary phase change materials for PRAM application

Journal of Physics Condensed Matter

Volumn 19, Issue 44, 2007, Pages

  Sun, C W ^a   Youm, M S ^b   Kim, Y T ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGENIDES; CRYSTALLIZATION; DIFFRACTION PATTERNS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PHASE SEPARATION; SPUTTERING; STOICHIOMETRY; TERNARY ALLOYS; THIN FILMS;

CRYSTALLIZATION BEHAVIOR; FACETTED PLANES; PHASECHANGE RANDOM ACCESS MEMORY(PRAM); SINGLE PHASE;

PHASE CHANGE MATERIALS;

EID: 36048970788     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/44/446004     Document Type: Article

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