Modelling of through silicon via RF performance and impact on signal transmission in 3D integrated circuits

2009 IEEE International Conference on 3D System Integration, 3DIC 2009

Volumn , Issue , 2009, Pages

  Cadix, Lionel ^a,b   Farcy, Alexis ^a   Bermond, Cédric ^b   Fuchs, Christine ^c   Leduc, Patrick ^c   Rousseau, Maxime ^a   Assous, Myriam ^c   Valentian, Alexandre ^c   Roullard, Julie ^b   Eid, Elie ^b   Sillon, Nicolas ^c   Fléchet, Bernard ^b   Ancey, Pascal ^a  

^a STMICROELECTRONICS   (France)

^b UNIVERSITÉ DE SAVOIE   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATED CIRCUIT; 3-D INTEGRATION; CIRCUIT PERFORMANCE; ELECTRICAL PERFORMANCE; ELECTROMAGNETIC SIMULATION; EQUIVALENT MODEL; FREQUENCY-DEPENDENT MODEL; HIGH ASPECT RATIO; KEY COMPONENT; OXIDE CAPACITANCE; PARASITIC ELEMENT; RF MEASUREMENTS; RF PERFORMANCE; SIGNAL TRANSMISSION; STACKED DIE; SUBSTRATE RESISTIVITY; THROUGH-SILICON-VIA;

ASPECT RATIO; INTEGRATED CIRCUITS; SIMULATORS; SPICE;

THREE DIMENSIONAL;

EID: 70549109935     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/3DIC.2009.5306592     Document Type: Conference Paper

References (13)

1. K. Banerjee, S.J. Souri, P. Kapur, and K.C. Saraswat, Proc. of IEEE, 89, no. 5, pp. 602-633, (2001).
2. W.R. Davis, J. Wilson, S. Mick, J. Xu, H. Hua, C. Mineo, A.M. Sule, M. Steer, Design & Test of Computers, 22, no 6, pp. 498-510 (2005).
3. K. Sakuma, P.S. Andry, C.K. Tsang, K. Sueoka, Y. Oyama, C. Patel, B. Dang, S.L. Wright, B.C. Webb, E. Sprogis, R. Polastre, R. Horton, J.U Knickerbocker, ECTC, 58, pp. 18-23 (2008).
4. K. Fukushima, T. Yamada, Y. Kikuchi, H. Tanaka, T. Koyanagi, M. Tohoku Univ., Sendai, J.U. ECTC, 57, pp. 836-841 (2007).
5. Takayuki Ohba, Nobuhide Maeda, Hideki Kitada, Kofi Fujimoto, Kousuke Suzuki, Tomoji Nakamura, Akihito Kawai, Kazuhisa Arai, Proc. of MAM 2009, Grenoble, to be published (2009).
6. Patrick Leduc, Proc. of VLSI Tech. Systems and App., pp. 76 - 78, Taiwan (2008).
7. L. Di Cioccio, P. Gueguen, F. Grossi, P. Leduc, B. Charlet , M. Assous, A Mathewson, J. Brun, D. Henry, P. Batude, P Coudrain, N Sillon, L Clavelier, G Poupon, M Scannell, 4th Int. Conf. and Exhibition on Device Packaging, IMAPS, Scottsdale (2008).
8. C. Bermond, L. Cadix, A. Farcy, T. Lacrevaz, P.Leduc, Proc. of SPI 2009, Strasbourg (2009).
9. E. W. Vandamme, D M. M.-P. Schreurs, C. vanDinther, IEEE Trans. on electron devices, 48, no 4, pp.737-742 (2001).
10. Lionel Cadix, C. Bermond, C. Fuchs, A. Farcy, P. Leduc, L. DiCioccio, M. Assous, M. Rousseau, B. Flechet, N. Sillon, P. Ancey Proc. of Advanced Metallization Conference, pp. 487-494, San Diego, USA (2008).
11. L. Cadix, C. Bermond, C. Fuchs, A. Farcy, P. Leduc, L. DiCioccio, M. Assous, M. Rousseau, F. Lorut, L.L. Chapelon, B. Flechet, N. Sillon, P. Ancey, Proc. of MAM 2009, Grenoble, to be published (2009).
12. I. Savidis, E.G. Friedman, TED2009, to be published (2009).
13. R. Weerasekera, D. Pamunuwa, M. Grange, H. Tenhunen, and L.-R. Zheng, Proc. of the workshop on 3-D Integration, Design, Automation, and Test in Europe (DATE) Conference (2009).