Optimized scaling of diode array design for 32NM node phase change memory

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2008, Pages 134-135

  Lu, Kailiang ^a,b   Rajendran, Bipin ^a,c   Happ, Thomas D ^a,d   Ng, Ricky M Y ^a,b   Lung, Hsiang Lan ^a,e   Lam, Chung ^a,c   Chan, Mansun ^a,b  

^a IBM Qimonda Macronix PCRAM Joint Project   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d Qimonda AG

^e MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 49049084423     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2008.4530833     Document Type: Conference Paper

References (1)

1. J.H. Oh, et. al., "Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology," in IEDM .Tech. Dig., Dec. 2006.