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Volumn 116, Issue , 2010, Pages 73-111

Ion-beam-induced amorphization and epitaxial crystallization of Silicon

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EID: 79960886622     PISSN: 03034216     EISSN: 14370859     Source Type: Book Series    
DOI: 10.1007/978-3-540-88789-8_4     Document Type: Article
Times cited : (5)

References (76)
  • 1
    • 0003752338 scopus 로고
    • Cambridge University Press, Cam-bridge, 73
    • A. Zangwill, Physics at Surfaces (Cambridge University Press, Cam-bridge, 1988) 73
    • (1988) Physics At Surfaces
    • Zangwill, A.1
  • 2
    • 0004259685 scopus 로고    scopus 로고
    • By J.M. Poate, J.W. Mayer (Academic Press, New York, 1982), 1574, 87, 98
    • F. Spaepen, D. Turnbull, in Laser Annealing of Semiconductors, ed. By J.M. Poate, J.W. Mayer (Academic Press, New York, 1982), p. 1574, 87, 98
    • Laser Annealing of Semiconductors
    • Spaepen, F.1    Turnbull, D.2
  • 5
    • 0041297265 scopus 로고    scopus 로고
    • by H. Ehrenreich, F. Spaepen (Academic Press, New York, 75
    • R.S. Averback, T. Diaz de la Rubia, in Solid State Physics, vol. 51, ed. by H. Ehrenreich, F. Spaepen (Academic Press, New York, 1998), p. 282 75
    • (1998) Solid State Physics , vol.51 , pp. 282
    • Averback, R.S.1    de la Diaz, R.T.2
  • 12
    • 85083869591 scopus 로고    scopus 로고
    • Unpublished
    • J.S. Williams, Unpublished, 1998 77
    • (1998) , pp. 77
    • Williams, J.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.