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Physical Review B

Volumn 52, Issue 22, 1995, Pages 15776-15784

Evidence for diffusion-limited kinetics of ion-beam-induced epitaxial crystallization in silicon

(4) Heera, V a Henkel, T a Kogler R a Skorupa, W a

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001718030 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.52.15776 Document Type: Article

Times cited : (56)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.