In situ measurements of the channeling dependence of ion-beam-induced recrystallization in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 772-776

  Azevedo, G De M ^a   Williams, J S ^a   Young, I M ^a   Conway, M J ^a   Kinomura, A ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Channeling; Ion beam induced crystallization; Point defects; Silicon

Indexed keywords

AMORPHOUS SILICON; CRYSTAL DEFECTS; CRYSTALLIZATION; ION BEAMS; ION BOMBARDMENT; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ION-BEAM-INDUCED CRYSTALLIZATION;

HIGH ENERGY PHYSICS;

EID: 0036569454     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01177-6     Document Type: Conference Paper

References (15)