Depth profiles and amorphization behavior under channeling conditions for low energy Bi ions implanted into Si crystals

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 149, Issue 3, 1999, Pages 301-311

  De M Azevedo, G ^a   Martini, J C ^a   Behar, M ^a   Grande, P L ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

34.50.Bw; 61.85.+p; 68.55.Ln

Indexed keywords

AMORPHIZATION; BISMUTH; CALCULATIONS; CRYSTALS; IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

CHANNELING; DEPTH PROFILES;

ION IMPLANTATION;

EID: 0033075356     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00893-3     Document Type: Article

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