Extended scalability of HfON/SiON gate stack down to 0.57nm equivalent oxide thickness with high carrier mobility by post-deposition annealing

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Ishikawa, Dai ^a   Kamiyama, Satoshi ^a   Kurosawa, Etsuo ^a   Aoyama, Takayuki ^a   Nara, Yasuo ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGGRESSIVE SCALING; CRYSTALLINE PHASIS; DIELECTRIC CONSTANTS; ELECTRICAL ANALYSIS; EQUIVALENT OXIDE THICKNESS; GATE STACKS; HIGH CARRIER MOBILITY; HIGH TEMPERATURE; HIGH-K GATE DIELECTRICS; HIGH-QUALITY INTERFACE; INTERFACIAL LAYER; INTERFACIAL QUALITIES; K-VALUE; POST DEPOSITION ANNEALING; TETRAGONAL PHASE; ULTRA-THIN;

DIELECTRIC MATERIALS; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; LOGIC GATES; PERSONAL DIGITAL ASSISTANTS; SILICON COMPOUNDS;

GATE DIELECTRICS;

EID: 77952472895     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C004     Document Type: Article

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