Controlling structural quality of ZnO thin film on c-plane sapphire during pulsed laser deposition

Journal of Crystal Growth

Volumn 329, Issue 1, 2011, Pages 20-26

  Loukya, B ^a   Sowjanya, P ^a   Dileep, K ^a   Shipra, R ^a   Kanuri, S ^a   Panchakarla, L S ^a   Datta, R ^a  

^a JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

A1. Defects; A3. Laser epitaxy; B1. Oxides; B2. Semiconducting IIVI materials

Indexed keywords

A1. DEFECTS; A3. LASER EPITAXY; AFM; B1. OXIDES; C-PLANE SAPPHIRE; CRYSTAL DOMAIN; EPITAXIAL RELATIONSHIPS; GROWTH PARAMETERS; LASER PULSE FREQUENCY; NUCLEATION LAYERS; SEEDING LAYERS; SEMICONDUCTING II-VI MATERIALS; SINGLE-CRYSTAL DIFFRACTION; STAGE OF GROWTH; STRUCTURAL QUALITIES; TEM IMAGES; ZNO; ZNO FILMS; ZNO THIN FILM;

DEPOSITION; DIFFRACTION PATTERNS; EPITAXIAL GROWTH; FILM GROWTH; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; INTERFEROMETRY; LASER PULSES; METALLIC FILMS; NUCLEATION; OPTICAL FILMS; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; SAPPHIRE; SINGLE CRYSTALS; SURFACE ROUGHNESS; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

PULSED LASERS;

EID: 79960841226     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.06.044     Document Type: Article

References (26)

1. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S.F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki Nat. Mater. 4 2005 42
2. Y.S. Choi, J.W. Kang, D.K. Hwang, and S.J. Park IEEE Trans. Electron. Devices 57 2010 26
3. S. Chu, M. Olmedo, Z. Yang, J. Kong, and J. Liu Appl. Phys. Lett. 93 2008 181106
4. F. Pan, C. Song, X.J. Liu, Y.C. Yang, and F. Zeng Mater. Sci. Eng. R 62 2008 1
5. T. Dietl Nat. Mater. 9 2010 965
6. H. Ohno Nat. Mater. 9 2010 952
7. H. Frenzel, A. Lajn, H. v. Wenckstern, M. Lorenz, F. Schein, Z. Zhang, and M. Grundmann Adv. Mater. 22 2010 5332
8. G.B. Murdoch, S. Hinds, E.H. Sargent, S.W. Tsang, L. Mordoukhovski, and Z.H. Lu Appl. Phys. Lett. 94 2009 213301
9. P. Vénneguès, B. Beamont, S. Haffouz, M. Vaille, and P. Gibart J. Cryst. Growth 187 1998 167
10. E. Frayssinet, B. Beamont, J.P. Faurie, P. Gibart, Z. Makkai, B. Pécz, P. Lefebvre, and P. Valvin MRS Internet J. Nitride Semicond. Res. 7 2002 8
11. R. Datta, M.J. Kappers, M.E. Vickers, J.S. Barnard, and C.J. Humphreys Superlatt. Microstruct. 36 2004 393
12. R. Datta, M.J. Kappers, J.S. Barnard, and C.J. Humphreys Mater. Res. Soc. Symp. Proc. 831 2004 E 8.8
13. M.J. Kappers, R. Datta, R.A. Oliver, F.D.G. Rayment, M.E. Vickers, and C.J. Humphreys J. Cryst. Growth 300 2007 70
14. O. Maksimov Rev. Adv. Mater. Sci. 24 2010 26
15. V. Avrutin, D.J. Silversmith, and H. Morkoc Proc. IEEE 98 2010 1269
16. G. Brauer, J. Kuriplach, C.C. Ling, and A.B. Djurisic J. Phys.: Conf. Ser. 265 2011 012002
17. M.K. Yadav, M. Ghosh, R. Biswas, A.K. Raychaudhuri, A. Mookerjee, and S. Datta Phys. Rev. B 76 2007 195450
18. P. Pant, J.D. Budai, R. Aggarwal, R.J. Narayan, and J. Narayan J. Phys. D: Appl. Phys. 42 2009 105409
19. E.M. Kaidashev, M. Lorenz, H. von Wenckstern, A. Rahm, H.-C. Semmelhack, K.-H. Han, G. Benndorf, C. Bundesmann, H. Hochmuth, and M. Grundmann Appl. Phys. Lett. 82 2003 3901
20. A. Janotti, and C.G. Van de Walle Rep. Prog. Phys. 72 2009 126501
21. N.H. Nickel, and E. Terukov Zinc Oxide - A Material for Micro- and Optoelectronic Applications 2004 Springer New York
22. C. Jagadish, and S.J. Pearton Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties and Applications 2006 Elsevier New York
23. J.M.D. Coey, M. Venkatesan, and C.B. Fitzgerald Nat. Mater. 4 2005 173
24. K. Dileep, L.S. Panchakarla, K. Balasubramanian, U.V. Waghmare, and R. Datta J. Appl. Phys. 063523 2011 109
25. G. Koster, A.J.H.M. Rijnders, D.H.A. Blank, and H. Rogalla Mater. Res. Soc. Symp. Proc. 526 1998 33
26. G. Koster, G.J.H.M. Rijnders, D.H.A. Blank, and H. Rogalla Appl. Phys. Lett. 74 1999 3729