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Volumn 20, Issue 7, 2011, Pages 912-916

Study of boron doping in MPCVD grown homoepitaxial diamond layers based on cathodoluminescence spectroscopy, secondary ion mass spectroscopy and capacitance-voltage measurements

(6) Omnès, Franck a Muret, Pierre a Volpe, Pierre Nicolas a Wade, Mamadou a Pernot, Julien a Jomard, François b

a LABORATOIRE DE CRISTALLOGRAPHIE (France)

b LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT (France)

Author keywords

Boron dosimetry; Cathodoluminescence; Diamond growth

Indexed keywords

A-COEFFICIENT; ACCELERATION VOLTAGES; BORON CONCENTRATIONS; BORON-DOPING; CAPACITANCE VOLTAGE MEASUREMENTS; CATHODOLUMINESCENCE SPECTROSCOPY; DIAMOND GROWTH; DIBORANE; EXCITON BOUND; FREE EXCITONS; GAS PHASE COMPOSITION; GASPHASE; HOMOEPITAXIAL DIAMOND LAYERS; INTENSITY RATIO; LINEAR RELATIONSHIPS; LOW LEVEL; ORDERS OF MAGNITUDE; SECONDARY ION MASS SPECTROSCOPY; SINGLE-CRYSTALLINE DIAMOND;

BORON; CATHODOLUMINESCENCE; DIAMOND FILMS; DIAMONDS; EXCITONS; GASES; MASS SPECTROMETERS; METHANE; OXYGEN; PASSIVATION; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY;

BORON COMPOUNDS;

EID: 79960770912 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2011.05.010 Document Type: Article

Times cited : (41)

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