Effect of oxygen addition on boron incorporation on semiconductive diamond CVD

Diamond and Related Materials

Volumn 7, Issue 8, 1998, Pages 1144-1147

  Sakaguchi, I ^a   Nishitani Gamo, M ^a   Loh, K P ^a   Yamamoto, K ^a,c   Haneda, H ^b   Ando, T ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NIRM   (Japan)

^c KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Boron suppression; CVD diamond; Oxygen addition; SIMS

Indexed keywords

BORON COMPOUNDS; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING DIAMONDS;

HOMOEPITAXIAL FILMS;

DIAMOND FILMS;

EID: 0032137616     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00161-7     Document Type: Article

References (15)

1. C.-P. Chang, D.L. Flamm, D.E. Ibbotson, J.A. Mucha, J. Appl. Phys. 63 (1988) 1744.
2. K. Kobashi, K. Nishimura, Y. Kawate, T. Horiuchi, Phys. Rev. B 38 (1988) 4067.
3. C. Chen, Y.C. Huang, S. Hosomi, I. Yoshida, Mater. Res. Bull. 24 (1989) 87.
4. J.A. Mucha, D.L. Flamm, D.E. Ibbotson, J. Appl. Phys. 65 (1989) 3448.
5. Y. Muranaka, H. Hamashita, K. Sato, H. Miyadera, J. Appl. Phys. 67 (1990) 6247.
6. S.J. Harris, A.M. Weiner, T.A. Perry, J. Appl. Phys. 70 (1991) 1385.
7. P.K. Bachmann, D. Leers, H. Lydtin, Diamond Relat. Mater. 1 (1991) 1.
8. F.G. Celii, J.E. Butler, J. Appl. Phys. 71 (1992) 2877.
9. C.F. Chen, T.M. Hong, S.H. Chen, J. Appl. Phys. 74 (1993) 4483.
10. W.Y. Fan, J. Roepcke, P.B. Davies, J. Vac. Sei. Technol. A 14 (1996) 2970.
11. Z.L. Toll, L. Heatherly, R.E. Clausing, C.S. Feigerle, J. Mater. Res. 12 (1997) 1344.
12. I. Sakaguchi, M.N. Gamo, K.P. Loh, H. Haneda, S. Hishita, T. Ando, Appl. Phys. Lett. 71 (1997) 629.
13. E. Yasu, N. Ohashi, T. Ando, J. Tanaka, M. Kamo, Y. Sato, H. Kiyota, Diamond Relat. Mater. 4 (1994) 59.
14. B.V. Spitsyn, L.L. Bouilov, B.V. Derjaguin, J. Cryst. Growth 52 (1981) 219.
15. T. Lang, J. Stiegler, Y. von Kaenel, E. Blank, Diamond Relat. Mater. 5 (1996) 1171.