High hole mobility in boron doped diamond for power device applications

Applied Physics Letters

Volumn 94, Issue 9, 2009, Pages

  Volpe, Pierre Nicolas ^a   Pernot, Julien ^a   Muret, Pierre ^a   Omnès, Franck ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIAMOND FILMS; DIAMONDS; DOPING (ADDITIVES); HALL MOBILITY; HOLE MOBILITY; OXYGEN;

ACCEPTOR DENSITIES; BORON-DOPED; BORON-DOPED DIAMONDS; DIAMOND SUBSTRATES; DOPING RANGES; ELECTRICAL BEHAVIORS; GAS-PHASE; HOMOEPITAXIAL DIAMOND LAYERS; KEY PARAMETERS; LOW FIELDS; MOBILITY PARAMETERS; MOBILITY VALUES; POWER DEVICES;

GALVANOMAGNETIC EFFECTS;

EID: 62149109219     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3086397     Document Type: Article

References (18)

1. S. Yamanaka, H. Watanabe, S. Masai, D. Takeuchi, H. Okushi, and K. Kajimura, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.37.L1129 37, L1129 (1998); K. Tsukioka and H. Okushi, Jpn. J. Appl. Phys., Part 1 45, 8571 (2006). 0021-4922
2. T. Teraji, H. Wada, M. Yamamoto, K. Arima, and T. Ito, Diamond Relat. Mater. 0925-9635 10.1016/j.diamond.2006.01.011 15, 602 (2006).
3. V. Mortet, M. Daenen, T. Teraji, A. Lazea, V. Vorlicek, J. D'Haen, K. Haenen, and M. D'Olieslaeger, Diamond Relat. Mater. 17, 1330 (2008).
4. M. Kadri, D. Araujo, M. Wade, A. Deneuville, and E. Bustarret, Diamond Relat. Mater. 14, 566 (2005).
5. M. Wade, P. Muret, F. Omǹs, and A. Deneuville, Diamond Relat. Mater. 15, 614 (2006).
6. P. N. Volpe, P. Muret, and F. Omǹs, Phys. Status Solidi A 0031-8965 10.1002/pssa.200879724 205, 2173 (2008).
7. D. C. Look, Electrical Characterization of GaAs Materials and Devices (Wiley, New York, 1989).
8. M. Willatzen, M. Cardona, and N. E. Christensen, Phys. Rev. B 0163-1829 10.1103/PhysRevB.50.18054 50, 18054 (1994).
9. Z. Remes, M. Nesladek, P. Bergonzo, J. Barjon, and F. Jomard, Phys. Status Solidi A 0031-8965 10.1002/pssa.200776341 204, 2950 (2007).
10. J. Pernot and S. Koizumi, Appl. Phys. Lett. 0003-6951 10.1063/1.2969066 93, 052105 (2008).
11. S. Kagamihara, H. Matsuura, T. Hatakeyama, T. Watanabe, M. Kushibe, T. Shinohe, and K. Arai, J. Appl. Phys. 0021-8979 10.1063/1.1798399 96, 5601 (2004).
12. J. Pernot, C. Tavares, E. Gheeraert, E. Bustarret, M. Katagiri, and S. Koizumi, Appl. Phys. Lett. 0003-6951 10.1063/1.2355454 89, 122111 (2006).
13. J. Pernot, S. Contreras, and J. Camassel, J. Appl. Phys. 0021-8979 10.1063/1.1978987 98, 023706 (2005).
14. We have excluded the samples 2 and 3 which exhibit scattering mechanism not purely phonon and doping dependent but also defects dependent as discussed in the text.
15. S. J. Rashid, A. Tajani, L. Coulbeck, M. Brezeanu, A. Garraway, T. Butler, N. L. Rupesinghe, D. J. Twitchen, G. A. J. Amaratunga, F. Udrea, P. Taylor, M. Dixon, and J. Isberg, Diamond Relat. Mater. 15, 317 (2006).
16. M. Gabrysch, S. Majdi, A. Halĺn, M. Linnarsson, A. Schöner, D. Twitchen, and J. Isberg, Phys. Status Solidi A 0031-8965 10.1002/pssa. 200879711 205, 2190 (2008).
17. M. Werner, R. Locher, W. Kohly, D. S. Holmes, S. Klose, and H. J. Fecht, Diamond Relat. Mater. 6, 308 (1997).
18. K. Thonke, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/18/3/303 18, S20 (2003).