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Volumn 20, Issue 3, 2011, Pages 285-289

Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers

(7) Muret, P a,b Volpe, P N a,b Tran Thi, T N a,b Pernot, J a,b Hoarau, C a,b Omnes F a,b Teraji, T c

a CNRS (France)

b UNIV GRENOBLE ALPES (France)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

Doping; Homoepitaxial diamond; Oxidized surface; Rectifiers; Schottky diodes

Indexed keywords

BORON; CURRENT VOLTAGE CHARACTERISTICS; DIAMOND FILMS; DIODES; DOPING (ADDITIVES); ELECTRIC RECTIFIERS; ELECTRIC RESISTANCE; OHMIC CONTACTS; RECTIFYING CIRCUITS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SURFACE TREATMENT;

BORON DOPING CONCENTRATION; BORON-DOPED DIAMOND FILMS; HIGH VOLTAGE ELECTRONICS; HOMOEPITAXIAL DIAMOND; METALLIC CONDUCTIVITY; OXIDIZED SURFACES; RECTIFYING EFFICIENCY; SCHOTTKY DIODES;

POWER SEMICONDUCTOR DIODES;

EID: 79551564908 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2011.01.008 Document Type: Article

Times cited : (23)

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