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Volumn 97, Issue 22, 2010, Pages

Extreme dielectric strength in boron doped homoepitaxial diamond

(12) Volpe, Pierre Nicolas a,f Muret, Pierre a Pernot, Julien a Omǹs, Franck a Teraji, Tokuyuki b Koide, Yasuo b Jomard, Fraņois c Planson, Dominique d Brosselard, Pierre d Dheilly, Nicolas d Vergne, Bertrand e Scharnholz, Sigo e

a LABORATOIRE DE CRISTALLOGRAPHIE (France)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c Centre National de la Recherche Scientifique (France)

d Univ Claude Bernard Lyon1 (France)

e FRENCH GERMAN RESEARCH INSTITUTE OF SAINT LOUIS (France)

f CEA LIST (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; BORON-DOPED; BREAKDOWN VOLTAGE; CRYSTALLINE QUALITY; DIELECTRIC STRENGTHS; FINITE ELEMENT; HOMOEPITAXIAL DIAMOND; OXIDIZING TREATMENT; SCHOTTKY DIODES;

BORON; ELECTRIC FIELDS; SCHOTTKY BARRIER DIODES;

EPITAXIAL FILMS;

EID: 78650655021 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3520140 Document Type: Article

Times cited : (129)

References (26)

1
- 0012438275
- DRMTE3 0925-9635,. 10.1016/0925-9635(93)90269-8
- M. I. Landstrass, M. A. Plano, M. A. Moreno, S. McWilliams, L. S. Pan, D. R. Kania, and S. Han, Diamond Relat. Mater. DRMTE3 0925-9635 2, 1033 (1993). 10.1016/0925-9635(93)90269-8
- (1993) Diamond Relat. Mater. , vol.2 , pp. 1033
- Landstrass, M.I.¹ Plano, M.A.² Moreno, M.A.³ McWilliams, S.⁴ Pan, L.S.⁵ Kania, D.R.⁶ Han, S.⁷

2
- 0011400914
- JPSOAW 0022-3719,. 10.1088/0022-3719/8/21/003
- R. Berman, P. R. W. Hudson, and M. Martinez, J. Phys. C JPSOAW 0022-3719 8, L430 (1975). 10.1088/0022-3719/8/21/003
- (1975) J. Phys. C , vol.8 , pp. 430
- Berman, R.¹ Hudson, P.R.W.² Martinez, M.³

3
- 0000723886
- PLRBAQ 0556-2805,. 10.1103/PhysRevB.23.3050
- L. Reggiani, S. Bosi, C. Canali, F. Nava, and S. F. Kozlov, Phys. Rev. B PLRBAQ 0556-2805 23, 3050 (1981). 10.1103/PhysRevB.23.3050
- (1981) Phys. Rev. B , vol.23 , pp. 3050
- Reggiani, L.¹ Bosi, S.² Canali, C.³ Nava, F.⁴ Kozlov, S.F.⁵

4
- 62149109219
- APPLAB 0003-6951, (); 10.1063/1.3086397, Phys. Rev. B PLRBAQ 0556-2805 81, 20520 (2010). 10.1103/PhysRevB.81.205203
- P. -N. Volpe, J. Pernot, P. Muret, and F. Omǹs, Appl. Phys. Lett. APPLAB 0003-6951 94, 092102 (2009); 10.1063/1.3086397 J. Pernot, P. N. Volpe, F. Omǹs, P. Muret, V. Mortet, K. Haenen, and T. Teraji, Phys. Rev. B PLRBAQ 0556-2805 81, 20520 (2010). 10.1103/PhysRevB.81.205203
- (2009) Appl. Phys. Lett. , vol.94 , pp. 092102
- Volpe, P.-N.¹ Pernot, J.² Muret, P.³ Omǹs, F.⁴ Pernot, J.⁵ Volpe, P.N.⁶ Omǹs, F.⁷ Muret, P.⁸ Mortet, V.⁹ Haenen, K.¹⁰ Teraji, T.¹¹

5
- 51849100755
- APPLAB 0003-6951,. 10.1063/1.2969066
- J. Pernot and S. Koizumi, Appl. Phys. Lett. APPLAB 0003-6951 93, 052105 (2008). 10.1063/1.2969066
- (2008) Appl. Phys. Lett. , vol.93 , pp. 052105
- Pernot, J.¹ Koizumi, S.²

6
- 0037031719
- High carrier mobility in single-crystal plasma-deposited diamond
- DOI 10.1126/science.1074374
- J. Isberg, J. Hammersberg, E. Johansson, T. Wikström, D. J. Twitchen, A. J. Whitehead, S. E. Coe, and G. A. Scarsbrook, Science SCIEAS 0036-8075 297, 1670 (2002). 10.1126/science.1074374 (Pubitemid 35000775)
- (2002) Science , vol.297 , Issue.5587 , pp. 1670-1672
- Isberg, J.¹ Hammersberg, J.² Johansson, E.³ Wikstrom, T.⁴ Twitchen, D.J.⁵ Whitehead, A.J.⁶ Coe, S.E.⁷ Scarsbrook, G.A.⁸

7
- 0037340204
- SSTEET 0268-1242,. 10.1088/0268-1242/18/3/309
- J. E. Butler, M. W. Geis, K. E. Krohn, J. Lawless, Jr., S. Deneault, T. M. Lyszczarz, D. Flechtner, and R. Wright, Semicond. Sci. Technol. SSTEET 0268-1242 18, S67 (2003). 10.1088/0268-1242/18/3/309
- (2003) Semicond. Sci. Technol. , vol.18 , pp. 67
- Butler, J.E.¹ Geis, M.W.² Krohn, K.E.³ Lawless Jr., J.⁴ Deneault, S.⁵ Lyszczarz, T.M.⁶ Flechtner, D.⁷ Wright, R.⁸

8
- 24144500844
- High-voltage diamond schottky rectifiers
- DOI 10.1142/S0129156404002971, PII S0129156404002971
- W. Huang, T. P. Chow, J. Yang, and J. E. Butler, Int. J. High Speed Electron. Syst. IHSSEF 0129-1564 14, 872 (2004). 10.1142/S0129156404002971 (Pubitemid 41232146)
- (2004) International Journal of High Speed Electronics and Systems , vol.14 , Issue.3 , pp. 872-878
- Huang, W.¹ Chow, T.P.² Yang, J.³ Butler, J.E.⁴

9
- 2442566848
- IETDAI 0018-9383,. 10.1109/TED.2004.826867
- D. W. Twitchen, A. J. Whitehead, S. E. Coe, J. Isberg, J. Hammersberg, T. Wikstrom, and E. Johansson, IEEE Trans. Electron Devices IETDAI 0018-9383 51, 826 (2004). 10.1109/TED.2004.826867
- (2004) IEEE Trans. Electron Devices , vol.51 , pp. 826
- Twitchen, D.W.¹ Whitehead, A.J.² Coe, S.E.³ Isberg, J.⁴ Hammersberg, J.⁵ Wikstrom, T.⁶ Johansson, E.⁷

10
- 0031994402
- DRMTE3 0925-9635,. 10.1016/S0925-9635(97)00200-8
- A. Vescan, I. Daumiller, P. Gluche, W. Ebert, and E. Kohn, Diamond Relat. Mater. DRMTE3 0925-9635 7, 581 (1998). 10.1016/S0925-9635(97)00200-8
- (1998) Diamond Relat. Mater. , vol.7 , pp. 581
- Vescan, A.¹ Daumiller, I.² Gluche, P.³ Ebert, W.⁴ Kohn, E.⁵

11
- 45049084799
- ASUSEE 0169-4332,. 10.1016/j.apsusc.2008.02.154
- T. Teraji, S. Koizumi, Y. Koide, and T. Ito, Appl. Surf. Sci. ASUSEE 0169-4332 254, 6273 (2008). 10.1016/j.apsusc.2008.02.154
- (2008) Appl. Surf. Sci. , vol.254 , pp. 6273
- Teraji, T.¹ Koizumi, S.² Koide, Y.³ Ito, T.⁴

12
- 67649668909
- DRMTE3 0925-9635,. 10.1016/j.diamond.2009.04.013
- H. Umezawa, K. Ikeda, N. Tatsumi, K. Ramanujam, and S. Shikata, Diamond Relat. Mater. DRMTE3 0925-9635 18, 1196 (2009). 10.1016/j.diamond.2009.04.013
- (2009) Diamond Relat. Mater. , vol.18 , pp. 1196
- Umezawa, H.¹ Ikeda, K.² Tatsumi, N.³ Ramanujam, K.⁴ Shikata, S.⁵

13
- 33751166792
- Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling
- DOI 10.1016/j.diamond.2006.08.030, PII S0925963506002937
- H. Umezawa, N. Tokuda, M. Ogura, S. -G. Ri, and S. Shikata, Diamond Relat. Mater. DRMTE3 0925-9635 15, 1949 (2006). 10.1016/j.diamond.2006.08.030 (Pubitemid 44779245)
- (2006) Diamond and Related Materials , vol.15 , Issue.11-12 SPEC. ISS. , pp. 1949-1953
- Umezawa, H.¹ Tokuda, N.² Ogura, M.³ Ri, S.-G.⁴ Shikata, S.-i.⁵

14
- 1542348281
- A 3.4 eV potential barrier height in Schottky diodes on boron-doped diamond thin films
- DOI 10.1016/j.diamond.2003.10.012
- M. Craciun, C. Saby, P. Muret, and A. Deneuville, Diamond Relat. Mater. DRMTE3 0925-9635 13, 292 (2004). 10.1016/j.diamond.2003.10.012 (Pubitemid 38319353)
- (2004) Diamond and Related Materials , vol.13 , Issue.2 , pp. 292-295
- Craciun, M.¹ Saby, Ch.² Muret, P.³ Deneuville, A.⁴

15
- 59649085738
- DRMTE3 0925-9635,. 10.1016/j.diamond.2008.10.055
- R. Kumaresan, H. Umezawa, N. Tatsumi, K. Ikeda, and S. Shikata, Diamond Relat. Mater. DRMTE3 0925-9635 18, 299 (2009). 10.1016/j.diamond.2008.10.055
- (2009) Diamond Relat. Mater. , vol.18 , pp. 299
- Kumaresan, R.¹ Umezawa, H.² Tatsumi, N.³ Ikeda, K.⁴ Shikata, S.⁵

16
- 67650257813
- JAPIAU 0021-8979,. 10.1063/1.3153986
- T. Teraji, Y. Garino, Y. Koide, and T. Ito, J. Appl. Phys. JAPIAU 0021-8979 105, 126109 (2009). 10.1063/1.3153986
- (2009) J. Appl. Phys. , vol.105 , pp. 126109
- Teraji, T.¹ Garino, Y.² Koide, Y.³ Ito, T.⁴

17
- 78650668511
- PSSABA 0031-8965,. 10.1002/pssa.201000055
- P. -N. Volpe, P. Muret, J. Pernot, F. Omǹs, T. Teraji, F. Jomard, D. Planson, P. Brosselard, N. Dheilly, B. Vergne, and S. Scharnholtz, Phys. Status Solidi A PSSABA 0031-8965 207, 2088 (2010). 10.1002/pssa.201000055
- (2010) Phys. Status Solidi A , vol.207 , pp. 2088
- Volpe, P.-N.¹ Muret, P.² Pernot, J.³ Omǹs, F.⁴ Teraji, T.⁵ Jomard, F.⁶ Planson, D.⁷ Brosselard, P.⁸ Dheilly, N.⁹ Vergne, B.¹⁰ Scharnholtz, S.¹¹

18
- 68749092633
- DRMTE3 0925-9635,. 10.1016/j.diamond.2009.04.008
- P. -N. Volpe, P. Muret, F. Omǹs, J. Achard, F. Silva, O. Brinza, and A. Gicquel, Diamond Relat. Mater. DRMTE3 0925-9635 18, 1205 (2009). 10.1016/j.diamond.2009.04.008
- (2009) Diamond Relat. Mater. , vol.18 , pp. 1205
- Volpe, P.-N.¹ Muret, P.² Omǹs, F.³ Achard, J.⁴ Silva, F.⁵ Brinza, O.⁶ Gicquel, A.⁷

19
- 0032620598
- APPLAB 0003-6951,. 10.1063/1.123698
- R. Zeisel, C. E. Nebel, and M. Stutzmann, Appl. Phys. Lett. APPLAB 0003-6951 74, 1875 (1999). 10.1063/1.123698
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1875
- Zeisel, R.¹ Nebel, C.E.² Stutzmann, M.³

20
- 77956329830
- PLRBAQ 0556-2805,. 10.1103/PhysRevB.81.235205
- P. Muret, J. Pernot, A. Kumar, L. Magaud, C. Mer-Calfati, and P. Bergonzo, Phys. Rev. B PLRBAQ 0556-2805 81, 235205 (2010). 10.1103/PhysRevB.81. 235205
- (2010) Phys. Rev. B , vol.81 , pp. 235205
- Muret, P.¹ Pernot, J.² Kumar, A.³ Magaud, L.⁴ Mer-Calfati, C.⁵ Bergonzo, P.⁶

21
- 0000536196
- PLRBAQ 0556-2805,. 10.1103/PhysRevB.58.7966
- J. Chevallier, B. Theys, A. Lusson, C. Grattepain, A. Deneuville, and E. Gheeraert, Phys. Rev. B PLRBAQ 0556-2805 58, 7966 (1998). 10.1103/PhysRevB.58. 7966
- (1998) Phys. Rev. B , vol.58 , pp. 7966
- Chevallier, J.¹ Theys, B.² Lusson, A.³ Grattepain, C.⁴ Deneuville, A.⁵ Gheeraert, E.⁶

22
- 84957324000
- EULEEJ 0295-5075,. 10.1209/0295-5075/27/6/012
- W. Mönch, Europhys. Lett. EULEEJ 0295-5075 27, 479 (1994). 10.1209/0295-5075/27/6/012
- (1994) Europhys. Lett. , vol.27 , pp. 479
- Mönch, W.¹

23
- 78650667093
- See for Sentaurus device user guide version D-2010.03, March
- See www.synopsys.com for Sentaurus device user guide version D-2010.03, March 2010.
- (2010)

24
- 59649108499
- DRMTE3 0925-9635,. 10.1016/j.diamond.2008.10.021
- K. Ikeda, H. Umezawa, N. Tatsumi, K. Ramanujam, and S. Shikata, Diamond Relat. Mater. DRMTE3 0925-9635 18, 292 (2009). 10.1016/j.diamond.2008.10.021
- (2009) Diamond Relat. Mater. , vol.18 , pp. 292
- Ikeda, K.¹ Umezawa, H.² Tatsumi, N.³ Ramanujam, K.⁴ Shikata, S.⁵

25
- 78650669271
- It is well known that finite element software is not able to calculate the electric field near discontinuity like the edge of the Schottky metal of this work. Generally the result is mesh size dependent. Also, in this work and for the edge value only, we consider the electric field at 1 μm from the edge. In this case, the field value is mesh size independent
- It is well known that finite element software is not able to calculate the electric field near discontinuity like the edge of the Schottky metal of this work. Generally the result is mesh size dependent. Also, in this work and for the edge value only, we consider the electric field at 1 μm from the edge. In this case, the field value is mesh size independent.

26
- 33644923513
- DRMTE3 0925-9635,. 10.1016/j.diamond.2005.06.019
- S. J. Rashid, A. Tajani, L. Coulbeck, M. Brezeanu, A. Garraway, T. Butler, N. L. Rupesinghe, D. J. Twitchen, G. A. J. Amaratunga, F. Udrea, P. Taylor, M. Dixon, and J. Isberg, Diamond Relat. Mater. DRMTE3 0925-9635 15, 317 (2006). 10.1016/j.diamond.2005.06.019
- (2006) Diamond Relat. Mater. , vol.15 , pp. 317
- Rashid, S.J.¹ Tajani, A.² Coulbeck, L.³ Brezeanu, M.⁴ Garraway, A.⁵ Butler, T.⁶ Rupesinghe, N.L.⁷ Twitchen, D.J.⁸ Amaratunga, G.A.J.⁹ Udrea, F.¹⁰ Taylor, P.¹¹ Dixon, M.¹² Isberg, J.¹³

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