Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the crystalline state

Applied Physics Letters

Volumn 99, Issue 3, 2011, Pages

  Zhou, Xilin ^a,b   Wu, Liangcai ^a   Song, Zhitang ^a   Rao, Feng ^a   Cheng, Yan ^a   Peng, Cheng ^a   Yao, Dongning ^a   Song, Sannian ^a   Liu, Bo ^a   Feng, Songlin ^a   Chen, Bomy ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGENIDE FILMS; CRITICAL FACTORS; CRYSTALLINE STATE; CRYSTALLIZATION MECHANISMS; DEGREE OF DISORDER; IN-SITU ANALYSIS; INTERMEDIATE RESISTANCE; MULTILEVEL DATA; PHASE CHANGE MEMORY CELLS; RESISTANCE STATE; VOLTAGE PULSE;

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CRYSTALLIZATION; ELECTRIC POTENTIAL; MONOLAYERS; TRANSMISSION ELECTRON MICROSCOPY;

PHASE CHANGE MEMORY;

EID: 79960761976     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3614553     Document Type: Article

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