Multiple phase-transition in Ge2Sb2Te5 based phase change memory cell by current-voltage measurement

Journal of Non-Crystalline Solids

Volumn 353, Issue 44-46, 2007, Pages 4043-4047

  Wu, Liangcai ^a   Song, Zhitang ^a   Liu, Bo ^a   Zhang, Ting ^a   Rao, Feng ^a   Shen, Jie ^a   Wang, Feng ^a   Feng, Songlin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Alloys; Amorphous semiconductors; Electrical and electronic properties

Indexed keywords

AMORPHOUS SEMICONDUCTORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRICAL ENGINEERING; ELECTRONIC PROPERTIES; PHASE CHANGE MEMORY; PHASE TRANSITIONS;

HIGH RESISTANCE; LIFT OFF PROCESS; METAL OXIDE SEMICONDUCTOR;

GERMANIUM;

EID: 35148884337     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.06.039     Document Type: Article

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