SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 35, Issue 6, 2011, Pages 149-154

Role of Zn-interstitial defects in the ultraviolet emission from ZnO

(7) Asghar, M a Mahmood, K a Ali, A a Hasan, M A b Raja, M Y A c Hussain, I d Willander, M d

a THE ISLAMIA UNIVERSITY OF BAHAWALPUR (Pakistan)

b University of North Carolina at Charlotte (United States)

c UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE (United States)

d LINKÖPING UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

II-VI SEMICONDUCTORS; OXIDE MINERALS; SEMICONDUCTOR DEVICES; ZINC OXIDE;

BOUND EXCITON; ENERGY DISPERSIVE X-RAY; PHOTOLUMINESCENCE MEASUREMENTS; ULTRA-VIOLET; ULTRAVIOLET EMISSION; UV EMISSIONS; VISIBLE LINES; ZN-INTERSTITIAL;

WIDE BAND GAP SEMICONDUCTORS;

EID: 79960759478 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.3570856 Document Type: Conference Paper

Times cited : (9)

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