Structural, morphological and photoluminescence properties of W-doped ZnO nanostructures

Applied Surface Science

Volumn 255, Issue 16, 2009, Pages 7314-7318

  Ngom, B D ^a,b   Sakho, O ^a   Manyala, N ^c   Kana, J B ^d   Mlungisi, N ^b   Guerbous, L ^e   Fasasi, A Y ^f   Maaza, M ^b   Beye, A C ^a  

^a UNIVERSITÉ CHEIKH ANTA DIOP   (Senegal)

^b MATERIALS RESEARCH GROUP   (South Africa)

^c UNIVERSITY OF PRETORIA   (South Africa)

^d UNIVERSITY OF YAOUNDÉ I   (Cameroon)

^e CENTRE DE RECHERCHE NUCLÉAIRE D ALGER   (Algeria)

^f OBAFEMI AWOLOWO UNIVERSITY   (Nigeria)

Author keywords

Laser ablation; Nanostructures; Semiconductor; ZnO nanomaterials

Indexed keywords

ATOMIC FORCE MICROSCOPY; II-VI SEMICONDUCTORS; LASER ABLATION; MAGNETIC SEMICONDUCTORS; NANORODS; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; PULSED LASERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; TUNGSTEN COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC OXIDE;

ALIGNED NANORODS; GREEN EMISSIONS; NEAR BAND EDGE; PHOTOLUMINESCENCE PROPERTIES; PREFERRED ORIENTATIONS; SUBSTRATE TEMPERATURE; VIOLET EMISSION; ZNO NANOMATERIALS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 67349277723     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.03.089     Document Type: Article

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