Correlation between the defect structure and the residual stress distribution in ZnO visualized by TEM and Raman microscopy

Materials Letters

Volumn 64, Issue 1, 2010, Pages 28-30

  Wermelinger, Thomas ^a,b   Mornaghini, Flavio C F ^a   Hinderling, Christian ^b   Spolenak, Ralph ^a  

^a ETH ZURICH   (Switzerland)

^b ZURICH UNIVERSITY OF APPLIED SCIENCES   (Switzerland)

Author keywords

Cathodoluminescence; Microstructure; Raman microscopy; Residual stresses; TEM; ZnO

Indexed keywords

CONFOCAL RAMAN MICROSCOPY; CROSS SECTION; CRYSTALLOGRAPHIC DIRECTIONS; DISTRIBUTION OF RESIDUAL STRESS; ELECTRICAL AND OPTICAL PROPERTIES; MECHANICAL STRESS; PRISM PLANES; RAMAN MEASUREMENTS; RAMAN MICROSCOPY; RESIDUAL STRESS DISTRIBUTIONS; RESIDUAL STRESS FIELDS; RESIDUAL STRESS STATE; TEM; ZNO; ZNO SINGLE CRYSTALS;

CATHODOLUMINESCENCE; DEFECT DENSITY; DEFECT STRUCTURES; ELECTRIC PROPERTIES; LIGHT EMISSION; MECHANICAL PROPERTIES; OPTICAL PROPERTIES; PLASTIC DEFORMATION; PLASTICS; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; STRESS CONCENTRATION; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

RESIDUAL STRESSES;

EID: 70350724385     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.09.061     Document Type: Article

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