Influence of background concentration induced field on the emission rate signatures of an electron trap in zinc oxide Schottky devices

Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

  Noor, Hadia ^a   Klason, P ^b   Faraz, S M ^c,d   Nur, O ^c   Wahab, Q ^c,d   Willander, M ^c   Asghar, M ^a  

^a THE ISLAMIA UNIVERSITY OF BAHAWALPUR   (Pakistan)

^b UNIVERSITY OF GOTHENBURG   (Sweden)

^c LINKÖPING UNIVERSITY   (Sweden)

^d NED UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Pakistan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKGROUND CONCENTRATION; CAPACITANCE TRANSIENT MEASUREMENTS; CAPACITANCE VOLTAGE MEASUREMENTS; CARRIER TRAPS; CHARGED IMPURITY; COULOMB POTENTIAL; CURRENT VOLTAGE; EMISSION RATES; EXPERIMENTAL DATA; FREE CARRIER CONCENTRATION; INDUCED FIELD; POOLE-FRENKEL MODEL; QUALITATIVE MEASUREMENTS; RESEARCH GROUPS; SCHOTTKY DEVICES; THEORETICAL MODELS; ZNO;

CAPACITANCE; CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRON TRAPS; OXYGEN; OXYGEN VACANCIES; POINT DEFECTS; TRANSIENT ANALYSIS; ZINC; ZINC OXIDE;

ACTIVATION ENERGY;

EID: 77952969064     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3428426     Document Type: Article

References (31)

1. D. C. Look, Mater. Sci. Eng. MSCEAA 0025-5416 80, 383 (2001). 10.1016/S0921-5107(00)00604-8 (Pubitemid 32331341)
2. H. V. Wenckstern, M. Brandt, H. Schmidt, G. Biehne, R. Pickenhain, H. Hochmuth, M. Lorenz, and M. Grundmann, Appl. Phys. A APSFDB 0721-7250 88, 135 (2007). 10.1007/s00339-007-3966-0 (Pubitemid 46753810)
3. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S. -J. Cho, and H. Morkoc, J. Appl. Phys. JAPIAU 0021-8979 98, 041301 (2005). 10.1063/1.1992666 (Pubitemid 41348664)
4. M. Willander, L. L. Yang, A. Wadeasa, S. U. Ali, M. H. Asif, Q. X. Zhao, and O. Nur, J. Mater. Chem. JMACEP 0959-9428 19, 1006 (2009). 10.1039/b816619f
5. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science SCIEAS 0036-8075 300, 1269 (2003). 10.1126/science.1083212 (Pubitemid 36621429)
6. H. Morko̧, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. JAPIAU 0021-8979 76, 1363 (1994). 10.1063/1.358463
7. D. C. Look, J. W. Hemsky, and J. R. Sizelove, Phys. Rev. Lett. PRLTAO 0031-9007 82, 2552 (1999). 10.1103/PhysRevLett.82.2552
8. M. Lannoo and J. Bourgoin, Point Defects in Semiconductors I: Theoretical Aspects (Springer-Verlag, Berlin, 1981); Point Defects in Semiconductors II: Experimental Aspects (Springer-Verlag, Berlin, 1983).
9. S. T. Pandelides, Deep Centers in Semiconductors: A State-of-the-Art Approach, 2nd ed. (Gordon and Breach Science Publishers, Yverdon, Switzerland, 1992).
10. M. Stavola, Identification of Defects in Semiconductors, Semiconductors and Semimetals Vol. 51B (Academic Press, San Diego, USA, 1999).
11. H. Frenzel, H. V. Wenckstern, A. Wriber, H. Schmidt, G. Biehne, H. Hochmuth, M. Lorenz, and M. Grundmann, Phys. Rev. B PRBMDO 0163-1829 76, 035214 (2007). 10.1103/PhysRevB.76.035214
12. T. Frank, G. Pensl, R. Tena-Zaera, J. Zúiga-Ṕrez, C. Martínez-Tomas, V. Múoz-Sanjoś, T. Ohshima, H. Itoh, D. Hofmann, D. Pfisterer, J. Sann, and B. Meyer, Appl. Phys. A APSFDB 0721-7250 88, 141 (2007). 10.1007/s00339-007-3963-3 (Pubitemid 46753811)
13. F. D. Auret, J. M. Nel, M. Hayes, L. Wu, W. Wesch, and E. Wendler, Superlattices Microstruct. SUMIEK 0749-6036 39, 17 (2006). 10.1016/j.spmi.2005. 08.021 (Pubitemid 43005117)
14. M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, H. von Wenckstern, G. Biehne, D. Spemann, and M. Grundmann, Solid State Commun. SSCOA4 0038-1098 137, 417 (2006). 10.1016/j.ssc.2005.12.028 (Pubitemid 43199764)
15. G. Vincent, A. Chantre, and D. Bois, J. Appl. Phys. JAPIAU 0021-8979 50, 5484 (1979). 10.1063/1.326601 (Pubitemid 10476038)
16. D. V. Lang, J. Appl. Phys. JAPIAU 0021-8979 45, 3023 (1974). 10.1063/1.1663719
17. Hadia Noor, P. Klason, O. Nur, Q. Wahab, M. Asghar, and M. Willander, J. Appl. Phys. JAPIAU 0021-8979 105, 123510 (2009). 10.1063/1.3149800
18. D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, New York, 2006).
19. A. S. Grove, Physics and Technology of Semiconductor Devices (John Wiley & Sons, Inc., New York, 1967).
20. A. Klein, F. Sauberlich, B. Spath, T. Schulmeyer, and D. Kraft, J. Mater. Sci. JMTSAS 0022-2461 42, 1890 (2007). 10.1007/s10853-006-1322-y (Pubitemid 46411783)
21. Y. Dong, Z. -Q. Fang, D. C. Look, G. Cantwell, J. Zhang, J. J. Song, and L. J. Brillson, Appl. Phys. Lett. APPLAB 0003-6951 93, 072111 (2008). 10.1063/1.2974983
22. Z. -Q. Fang, B. Claflin, D. C. Look, Y. F. Dong, H. L. Mosbacker, and L. J. Brillson, J. Appl. Phys. JAPIAU 0021-8979 104, 063707 (2008). 10.1063/1.2978374
23. T. Miyajima, K. Akimoto, and Y. Mori, J. Appl. Phys. JAPIAU 0021-8979 67, 1389 (1990). 10.1063/1.345694
24. N. Baber, H. Scheffler, A. Ostmann, T. Wolf, and D. Bimberg, Phys. Rev. B PRBMDO 0163-1829 45, 4043 (1992). 10.1103/PhysRevB.45.4043
25. J. C. Simpson and J. F. Cordaro, J. Appl. Phys. JAPIAU 0021-8979 63, 1781 (1988). 10.1063/1.339919
26. J. J. Harris, K. J. Lee, J. B. Webb, H. Tang, I. Harrison, L. B. Flannery, T. S. Cheng, and C. T. Foxon, Semicond. Sci. Technol. SSTEET 0268-1242 15, 413 (2000). 10.1088/0268-1242/15/4/319 (Pubitemid 30584778)
27. P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic, London, 1992).
28. S. Makram-Ebeid and M. Lannoo, Phys. Rev. Lett. PRLTAO 0031-9007 48, 1281 (1982). 10.1103/PhysRevLett.48.1281
29. S. D. Ganichev, E. Ziemann, and W. Prettl, Phys. Rev. B PRBMDO 0163-1829 61, 10361 (2000). 10.1103/PhysRevB.61.10361
30. P. A. Martin, B. G. Streetmann, and K. Hess, J. Appl. Phys. JAPIAU 0021-8979 52, 7409 (1981). 10.1063/1.328731 (Pubitemid 12456855)
31. S. D. Ganichev, I. N. Yassievich, W. Pettl, J. Diener, B. K. Meyer, and K. W. Benz, Phys. Rev. Lett. PRLTAO 0031-9007 75, 1590 (1995). 10.1103/PhysRevLett.75.1590