Characterization of charged defects in CdxHg1-xTe and CdTe crystals by electron beam induced current and scanning tunneling spectroscopy

Applied Physics Letters

Volumn 72, Issue 17, 1998, Pages 2129-2131

  Panin, G ^a   Diaz Guerra C ^a   Piqueras, J ^a  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; COMPOSITION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRONIC PROPERTIES; ENERGY GAP; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY;

CURRENT IMAGING TUNNELING SPECTROSCOPY; ELECTRICALLY ACTIVE DEFECT; ELECTRONIC INHOMOGENEITIES; ELECTROSTATIC BARRIER; REMOTE ELECTRON BEAM INDUCED CURRENT MODE;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0032045260     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121298     Document Type: Article

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