Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires

Journal of Physics D: Applied Physics

Volumn 43, Issue 2, 2010, Pages

  Zhou, Feng ^a   Moore, Arden L ^b   Pettes, Michael T ^b   Lee, Yong ^b   Seol, Jae Hun ^b   Ye, Qi Laura ^c   Rabenberg, Lew ^a,b   Shi, Li ^a,b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b The University of Texas at Austin   (United States)

^c NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASE PRESSURE; BULK VALUE; FIGURE OF MERIT; GROWTH DIRECTIONS; HIGH VACUUM; INDIUM ANTIMONIDE; LATTICE THERMAL CONDUCTIVITY; RESIDUAL OXYGEN; SB-DOPED; SOURCE MATERIAL; SURFACE SCATTERING; TEM; THERMOELECTRIC PROPERTIES; ZINC-BLENDE;

DOPING (ADDITIVES); ELECTRON MOBILITY; INDIUM; INDIUM ANTIMONIDES; NANOWIRES; OXYGEN; PRESSURE EFFECTS; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; ZINC;

GROWTH (MATERIALS);

EID: 73649119235     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/2/025406     Document Type: Article

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