메뉴 건너뛰기




Volumn , Issue , 2008, Pages

Light emission from rare-earth doped silicon nanostructures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 79960579755     PISSN: 16876393     EISSN: 16876407     Source Type: Journal    
DOI: 10.1155/2008/295601     Document Type: Article
Times cited : (26)

References (39)
  • 3
    • 33751394994 scopus 로고    scopus 로고
    • Advances in silicon photonic devices for silicon-based optoelectronic applications
    • DOI 10.1016/j.physe.2006.08.019, PII S1386947706004681
    • A. Liu and M. Paniccia, "Advances in silicon photonic devices for silicon-based optoelectronic applications," Physica E, vol. 35, no. 2, pp. 223-228, 2006. (Pubitemid 44820978)
    • (2006) Physica E: Low-Dimensional Systems and Nanostructures , vol.35 , Issue.2 , pp. 223-228
    • Liu, A.1    Paniccia, M.2
  • 5
    • 0032047692 scopus 로고    scopus 로고
    • Erbium-doped optical-waveguide amplifiers on silicon
    • P. G. Kik and A. Polman, "Erbium-doped optical-waveguide amplifiers on silicon," MRS Bulletin, vol. 23, no. 4, pp. 48-54, 1998. (Pubitemid 128625004)
    • (1998) MRS Bulletin , vol.23 , Issue.4 , pp. 48-54
    • Kik, P.G.1    Polman, A.2
  • 6
    • 0036034175 scopus 로고    scopus 로고
    • Recent developments in rare-earth doped materials for optoelectronics
    • DOI 10.1016/S0079-6727(02)00014-9, PII S0079672702000149
    • A. J. Kenyon, "Recent developments in rare-earth doped materials for optoelectronics," Progress in Quantum Electronics, vol. 26, no. 4-5, pp. 225-284, 2002. (Pubitemid 35256036)
    • (2002) Progress in Quantum Electronics , vol.26 , Issue.4-5 , pp. 225-284
    • Kenyon, A.J.1
  • 8
    • 1342290816 scopus 로고    scopus 로고
    • Light emission from rare-earth-implanted GaN expected for full-color display
    • Smart Materials, Structures, and Systems, San Diego, Calif, USA, October
    • A. Yoshida, Y. Nakanishi, and A. Wakahara, "Light emission from rare-earth-implanted GaN expected for full-color display," in Smart Materials, Structures, and Systems, vol. 5062 of Proceedings of SPIE, pp. 18-19, San Diego, Calif, USA, October 2003.
    • (2003) Proceedings of SPIE , vol.5062 , pp. 18-19
    • Yoshida, A.1    Nakanishi, Y.2    Wakahara, A.3
  • 10
    • 0142124452 scopus 로고    scopus 로고
    • A 103 W erbium-ytterbium co-doped large-core fiber laser
    • J. K. Sahu, Y. Jeong, D. J. Richardson, and J. Nilsson, "A 103 W erbium-ytterbium co-doped large-core fiber laser," Optics Communications, vol. 227, no. 1-3, pp. 159-163, 2003.
    • (2003) Optics Communications , vol.227 , Issue.1-3 , pp. 159-163
    • Sahu, J.K.1    Jeong, Y.2    Richardson, D.J.3    Nilsson, J.4
  • 14
    • 10044248843 scopus 로고    scopus 로고
    • Broadband sensitizers for erbium-doped planar optical amplifiers: Review
    • A. Polman and F. C. J. M. van Veggel, "Broadband sensitizers for erbium-doped planar optical amplifiers: review," Journal of the Optical Society of America B, vol. 21, no. 5, pp. 871-892, 2004.
    • (2004) Journal of the Optical Society of America B , vol.21 , Issue.5 , pp. 871-892
    • Polman, A.1    Van Veggel, F.C.J.M.2
  • 15
    • 0008813837 scopus 로고    scopus 로고
    • Electronic states and luminescence in porous silicon quantum dots: The role of oxygen
    • M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, "Electronic states and luminescence in porous silicon quantum dots: the role of oxygen," Physical Review Letters, vol. 82, no. 1, pp. 197-200, 1999. (Pubitemid 129661984)
    • (1999) Physical Review Letters , vol.82 , Issue.1 , pp. 197-200
    • Wolkin, M.V.1    Jorne, J.2    Fauchet, P.M.3    Allan, G.4    Delerue, C.5
  • 16
    • 27944438949 scopus 로고    scopus 로고
    • Erbium in silicon
    • DOI 10.1088/0268-1242/20/12/R02, PII S0268124205766396
    • A. J. Kenyon, "Erbium in silicon," Semiconductor Science and Technology, vol. 20, no. 12, pp. R65-R84, 2005. (Pubitemid 41662325)
    • (2005) Semiconductor Science and Technology , vol.20 , Issue.12
    • Kenyon, A.J.1
  • 17
    • 38349122803 scopus 로고    scopus 로고
    • Generalized rate-equation analysis of excitation exchange between silicon nanoclusters and erbium ions
    • Article ID 035318
    • A. J. Kenyon, M. Wojdak, I. Ahmad, W. H. Loh, and C. J. Oton, "Generalized rate-equation analysis of excitation exchange between silicon nanoclusters and erbium ions," Physical Review B, vol. 77, no. 3, Article ID 035318, 9 pages, 2008.
    • (2008) Physical Review B , vol.77 , Issue.3 , pp. 9
    • Kenyon, A.J.1    Wojdak, M.2    Ahmad, I.3    Loh, W.H.4    Oton, C.J.5
  • 18
    • 0001315569 scopus 로고    scopus 로고
    • The origin of photoluminescence from thin films of silicon-rich silica
    • A. J. Kenyon, P. F. Trwoga, C. W. Pitt, and G. Rehm, "The origin of photoluminescence from thin films of silicon-rich silica," Journal of Applied Physics, vol. 79, no. 12, pp. 9291-9300, 1996. (Pubitemid 126581305)
    • (1996) Journal of Applied Physics , vol.79 , Issue.12 , pp. 9291-9300
    • Kenyon, A.J.1    Trwoga, P.F.2    Pitt, C.W.3    Rehm, G.4
  • 19
    • 13244257024 scopus 로고    scopus 로고
    • Optical gain at 1.5 μm in nanocrystal Si-sensitized Er-doped silica waveguide using top-pumping 470 nm LEDs
    • DOI 10.1109/JLT.2004.840341
    • J. Lee, J. H. Shin, and N. Park, "Optical gain at 1.5 μm in nanocrystal Si-sensitized Er-doped silica waveguide using top-pumping 470nm LEDs," Journal of Lightwave Technology, vol. 23, no. 1, pp. 19-25, 2005. (Pubitemid 40181690)
    • (2005) Journal of Lightwave Technology , vol.23 , Issue.1 , pp. 19-25
    • Lee, J.1    Shin, J.H.2    Park, N.3
  • 20
    • 3042825317 scopus 로고    scopus 로고
    • 3+luminescence from Tb-doped silicon-rich silicon oxide by C co-doping
    • 3+ luminescence from Tb-doped silicon-rich silicon oxide by C co-doping," Applied Physics Letters, vol. 84, no. 22, pp. 4379-4381, 2004.
    • (2004) Applied Physics Letters , vol.84 , Issue.22 , pp. 4379-4381
    • Seo, S.-Y.1    Shin, J.H.2
  • 22
    • 30644475734 scopus 로고    scopus 로고
    • The impact of deposition parameters on the optical and compositional properties of Er doped SRSO thin films deposited by ECR-PECVD
    • V5.7/FF5.7, Rare-Earth Doping for Optoelectronic Applications
    • M. Flynn, J. Wojcik, S. Gujrathi, E. Irving, and P. Mascher, "The impact of deposition parameters on the optical and compositional properties of Er doped SRSO thin films deposited by ECR-PECVD," in Proceedings of the Materials Research Society Symposium, vol. 866, pp. 163-167, San Francisco, Calif, USA, March 2005. (Pubitemid 43084633)
    • (2005) Materials Research Society Symposium Proceedings , vol.866 , pp. 163-167
    • Flynn, M.1    Wojcik, J.2    Gujrathi, S.3    Irving, E.4    Mascher, P.5
  • 23
    • 33750019428 scopus 로고    scopus 로고
    • Coupled luminescence centres in erbium-doped silicon rich silicon oxide thin films
    • Photonics North, Quebec City, Canada, June
    • D. E. Blakie, O. H. Y. Zalloum, J. Wojcik, E. J. Irving, A. P. Knights, and P. Mascher, "Coupled luminescence centres in erbium-doped silicon rich silicon oxide thin films," in Photonics North, vol. 6343 of Proceedings of SPIE, p. 11 pages, Quebec City, Canada, June 2006.
    • (2006) Proceedings of SPIE , vol.6343 , pp. 11
    • Blakie, D.E.1    Zalloum, O.H.Y.2    Wojcik, J.3    Irving, E.J.4    Knights, A.P.5    Mascher, P.6
  • 25
    • 33644585205 scopus 로고    scopus 로고
    • Laser photoluminescence spectrometer based on charge-coupled device detection for silicon-based photonics
    • Article ID 023907
    • O. H. Y. Zalloum, M. Flynn, T. Roschuk, J. Wojcik, E. Irving, and P.Mascher, "Laser photoluminescence spectrometer based on charge-coupled device detection for silicon-based photonics," Review of Scientific Instruments, vol. 77, no. 2, Article ID 023907, 8 pages, 2006.
    • (2006) Review of Scientific Instruments , vol.77 , Issue.2 , pp. 8
    • Zalloum, O.H.Y.1    Flynn, M.2    Roschuk, T.3    Wojcik, J.4    Irving, E.5    Mascher, P.6
  • 31
    • 33646194019 scopus 로고    scopus 로고
    • 3+ photoluminescence from Tb-doped silicon oxynitride
    • Article ID 161910
    • 3+ photoluminescence from Tb-doped silicon oxynitride," Applied Physics Letters, vol. 88, no. 16, Article ID 161910, 3 pages, 2006.
    • (2006) Applied Physics Letters , vol.88 , Issue.16 , pp. 3
    • Jeong, H.1    Seo, S.-Y.2    Shin, J.H.3
  • 32
    • 0037352225 scopus 로고    scopus 로고
    • Growth process and properties of silicon nitride deposited by hot-wire chemical vapor deposition
    • B. Stannowski, J. K. Rath, and R. E. I. Schropp, "Growth process and properties of silicon nitride deposited by hot-wire chemical vapor deposition," Journal of Applied Physics, vol. 93, no. 5, pp. 2618-2625, 2003.
    • (2003) Journal of Applied Physics , vol.93 , Issue.5 , pp. 2618-2625
    • Stannowski, B.1    Rath, J.K.2    Schropp, R.E.I.3
  • 35
    • 0000256255 scopus 로고    scopus 로고
    • Violet/blue emission from epitaxial cerium oxide films on silicon substrates
    • A. H. Morshed, M. E. Moussa, S. M. Bedair, R. Leonard, S. X. Liu, and N. El-Masry, "Violet/blue emission from epitaxial cerium oxide films on silicon substrates," Applied Physics Letters, vol. 70, no. 13, pp. 1647-1649, 1997. (Pubitemid 127638616)
    • (1997) Applied Physics Letters , vol.70 , Issue.13 , pp. 1647-1649
    • Morshed, A.H.1    Moussa, M.E.2    Bedair, S.M.3    Leonard, R.4    Liu, S.X.5    El-Masry, N.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.