Fluorescence XAFS study on local structures around Tb ions implanted in SiO2 on Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 199, Issue , 2003, Pages 231-234

  Ofuchi, H ^a   Imaizumi, Y ^b   Sugawara, H ^c   Fujioka, H ^d   Oshima, M ^d   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c TOKYO METROPOLITAN UNIVERSITY   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Local structure; Silicon oxide; Terbium; X ray fluorescence analysis; XAFS

Indexed keywords

ELECTROMAGNETIC WAVE ABSORPTION; ION IMPLANTATION; MOLECULAR STRUCTURE; PHOTOLUMINESCENCE; TERBIUM;

X RAY ABSORPTION FINE STRUCTURE (XAFS);

SILICA;

EID: 0037240627     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01543-4     Document Type: Conference Paper

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