Visible photoluminescence from Tb3+ ions implanted into a SiO2 film on Si at room temperature

Proceedings of the International Conference on Ion Implantation Technology

Volumn 2, Issue , 1999, Pages 925-928

  Amekura, H ^a   Eckau, A ^a   Carius, R ^a   Buchal, Ch ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL DEFECTS; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; ION IMPLANTATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICA; SILICON WAFERS; TERBIUM;

DEPTH PROFILING;

SEMICONDUCTING FILMS;

EID: 0033312466     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)