Light emission from rare-earth-implanted GaN expected for full color display

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5062, Issue 1, 2002, Pages 18-19

  Yoshida, A ^a   Nakanishi, Y ^a   Wakahara, A ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

GaN; Ion implantation; Light emission; Radiation damage; Rare earth

Indexed keywords

ANNEALING; ELECTRONIC DENSITY OF STATES; EPITAXIAL GROWTH; EUROPIUM; ION IMPLANTATION; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; QUENCHING; RADIATION DAMAGE;

HALL EFFECT MEASUREMENT; HIGH ENERGY ELECTRON INDUCED DAMAGES; IMPLANTATION DAMAGES; THERMAL QUENCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1342290816     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)