Soluble fullerene derivatives: The effect of electronic structure on transistor performance and air stability

Journal of Applied Physics

Volumn 110, Issue 1, 2011, Pages

  Ball, James M ^a   Bouwer, Ricardo K M ^b,c   Kooistra, Floris B ^b   Frost, Jarvist M ^a   Qi, Yabing ^d   Domingo, Ester Buchaca ^a   Smith, Jeremy ^a   De Leeuw, Dago M ^e   Hummelen, Jan C ^b   Nelson, Jenny ^a   Kahn, Antoine ^d   Stingelin, Natalie ^a   Bradley, Donal D C ^a   Anthopoulos, Thomas D ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF GRONINGEN   (Netherlands)

^c DUTCH POLYMER INSTITUTE DPI   (Netherlands)

^d Princeton University   (United States)

^e PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AIR STABILITY; CANDIDATE MATERIALS; COMPLEMENTARY LOGIC CIRCUITS; DEVICE PERFORMANCE; DEVICE PROPERTIES; ELECTRON TRANSPORTING; ELECTRONIC APPLICATION; EXPERIMENTAL ANALYSIS; FULLERENE DERIVATIVE; HIGH CARRIER MOBILITY; N-CHANNEL; ORGANIC ELECTRONICS; STRINGENT REQUIREMENT; THIN-FILM STRUCTURE; TRANSISTOR PERFORMANCE;

CARRIER MOBILITY; CHARACTERIZATION; DENSITY FUNCTIONAL THEORY; ELECTRON AFFINITY; ELECTRON TRANSITIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FULLERENES; LOGIC CIRCUITS; OPTOELECTRONIC DEVICES; TRANSISTORS;

STABILITY;

EID: 79960535684     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3605531     Document Type: Article

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