Fluorine containing C60 derivatives for high-performance electron transporting field-effect transistors and integrated circuits

Applied Physics Letters

Volumn 92, Issue 14, 2008, Pages

  Wöbkenberg, Paul H ^a   Ball, James ^a   Bradley, Donal D C ^a   Anthopoulos, Thomas D ^a   Kooistra, Floris ^b   Hummelen, Jan C ^b   De Leeuw, Dago M ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF GRONINGEN   (Netherlands)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; FLUORINE; FULLERENES; INTEGRATED CIRCUITS;

BOTTOM-CONTACT TRANSISTORS; SEMICONDUCTOR FILMS; SOURCE-DRAIN ELECTRODES; STRUCTURAL ORDER;

FIELD EFFECT TRANSISTORS;

EID: 42149192020     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2907348     Document Type: Article

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