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Journal of the Korean Physical Society

Volumn 53, Issue 5 PART 2, 2008, Pages 2909-2912

Growth of nitrogen-doped MgxZn1-xO for use in visible rejection photodetectors

(8) Nakamura, A a Aoshima, T a Hayashi, T a Gangil, S a Temmyo, J a Navarro, A b Pereiro, J b Munoz E b

a SHIZUOKA UNIVERSITY (Japan)

b UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

Author keywords

C V; I V characteristics; MgZnO; Schottky contact; UV detector

Indexed keywords

EID: 57349186212 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: 10.3938/jkps.53.2909 Document Type: Conference Paper

Times cited : (5)

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